| PART |
Description |
Maker |
| HY5V56BLF-I HY5V56BF-I |
16Mx16|3.3V|8K|H/8/P/S|SDR SDRAM - 256M 16Mx16显示| 3.3 | 8K的| H/8/P/S |特别提款权的SDRAM - 256M
|
Omron Electronics, LLC
|
| HY5DU561622CTP-28 HY5DU561622CTP-33 HY5DU561622CTP |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM
16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|
| M463S1654DT1 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| HYB25L512160AC-7.5 HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| M366S1654CTS-C7A M366S1654CTS-L1L M366S1654CTS-C7C |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在16Mx16显示BanksK的刷新，3.3V的同步DRAM的社民党
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY5DU56422AT HY5DU56422ALT HY5DU561622AT |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
|
Hynix Semiconductor, Inc.
|
| K4X56163P-L K4X56163PI-LFE_GC3 K4X56163PI-LFE_GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PI-LFE/GC3 K4X56163PI-LFE/GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| IS43R16160B-6BL IS43R16160B-5BLI IS43R16160B-5BL-T |
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| CAT25C081PI-17 CAT25C321PI-17 CAT25C041PI-17 CAT25 |
SPECIALTY MICROPROCESSOR CIRCUIT, PDIP8 PLASTIC, DIP-8
SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16
SPECIALTY MICROPROCESSOR CIRCUIT, PDSO14
SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8
|
SunLED Co., Ltd.
|
| M368L1624BT1 |
8Mx64 DDR SDRAM 184pin DIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
